[1] Bayer, T. D.: Inverter power module parasitics modeling with cross-coupling simplification for fast model extraction and switching characteristics simulation. 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), DOI: 10.1109/APEC.2018.8341421.
[2] THE 17 GOALS. Generalversammlung der Vereinten Nationen, Department of Economic and Social Affairs, https://sdgs.un.org/goals.
[3] Griesinger, A.: Wärmemanagement in der Elektronik. Springer Vieweg, Stuttgart, 2019, ISBN: 978-3-662-58681-5.
[4] Chowdhury, S.; Stum, Z.; Li, Z.; Ueno, K. und Chow, T. P.: Comparison of 600V Si, SiC and GaN power devices. Materials Science Forum, 2014, H. 778–780, S. 971–974, DOI:10.4028/www.scientific.net/MSF.778-780.971.
[5] Wessel, W.; Bauer, F. und Liebetegger, S.: Enable S-Parameters for Power Modules. Siemens EDA, 6/2023.
[6] IGBT Trenchstop IGBT 4 Medium Power Chip IGC193T120T8RM. Infineon Technologies, Datenblatt, 20.8.2015, www.infineon.com/dgdl/Infineon-IGC193T120T8RM-DS-v02_01-EN.pdf?fileId=db3a30433784a04001382e2b934d28b4.
[7] Wessel, W.; Schwarbacher, A.; Jakob, C. und Bauer, F.: Why S-Parameters are superior for power module optimization. Siemens Digital Industries Software, Whitepaper, 5/2023, https://static.sw.cdn.siemens.com/siemens-disw-assets/public/7M2pGTiXP2xiNOBQs6uSWo/en-US/Siemens-SW-Why-S-Parameters-are-superior-for-power-module-optimization-WP-85330-D4.pdf.