Vorteile von Superjunction- und konventionellen Hochvolt-Bauelementen vereint
Coole MOSFETs
Fortsetzung des Artikels von Teil 4
Literatur
[1] Fujihira, T.: Simulated Superior Performances of Semiconductor Superjunction Devices. ISPSD 1998, S. 423ff.
[2] Coe, D.J.: High voltage semiconductor device. U.S. Patent 4 754 310, 1988.
[3] Ludikhuize, A.W.: A review of the RESURF technology. ISPSD 2000, S. 11ff.
[4] Chen, X.B.; Hu, C.: Optimum doping profile of power MOSFET’s epitaxial Layer. IEEE Trans. Electron Devices, vol. ED-29, S. 985 – 987, 1982.
[5] Deboy, G., et al.: A new generation of high voltage MOSFETs breaks the circuit line of Silicon. Tech. Dig., IEDMIEEE, S. 683, 1998.
[6] Yamauchi, S., et al.: Electrical Properties of Super Junction p-n Diodes Fabricated by Trench Filling. ISPSD 2003, S. 207.
[7] Takahashi, K., et al.: 20 mΩ×cm2 660 V SJ MOSFET fabricated by deep trench etch and epitaxial growth. ISPSD 2006.
[8] Website von Infineon: www.infineon.com
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