Infineon has developed the industry's first radiation-proof, QML-V qualified NOR flash memory for space-grade FPGAs.
Radiation-resistant field-programmable gate arrays (FPGAs) for space applications require configuration memories that are highly reliable and have a high density of non-volatile memories. To meet the growing need for these memories, Infineon Technologies LLC is launching the first radiation-resistant high-density NOR flash memories. The NOR flash memories are qualified to the QML-V flow (QML-V equivalent) of MIL-PRF-38535, the highest quality and reliability standard for aerospace ICs.
Infineon's 256-Mb and 512-Mb non-volatile, radiation-resistant NOR flash memories are low pin-count single chips for applications such as FPGA configuration, image storage, microcontroller data and boot code storage. When used at higher clock rates, the data transfer supported by the memories outperforms conventional asynchronous NOR flash memories with parallel interfaces while dramatically reducing pin count. The NOR Flash memories are radiation tolerant up to 30 krad (Si) biased and 125 krad (Si) unbiased. At 125 °C, they are capable of 1,000 program and erase cycles and 30 years of data retention; at 85 °C, they are capable of 10,000 program and erase cycles with 250 years of data retention.
Infineon manufactures the radiation-resistant quad SPI (QSPI) with 256 Mb and the dual quad SPI NOR flash with 512 Mb based on 65-nm floating gate flash process technology. Both memories feature a 133 MHz SDR interface. The 512-Mb type consists of two independent 256-Mb dies that fit side-by-side in a single package. This allows designers to run the components independently in dual-QSPI or single-QSPI mode on one of the two dies, allowing the second die to also be used as a backup. Infineon works closely with leading FPGA manufacturers such as Xilinx on space-qualified applications. "Now, for example, the full configuration for Xilinx's Kintex UltraScale XQRKU060 can be loaded in dual quad mode in about 0.2 s," said Helmut Puchner, VP Fellow of Aerospace and Defense at Infineon Technologies LLC.
The NOR flash memories can be programmed in-system via the FPGA or via a stand-alone programmer offered in the same 36-pin ceramic flat package. Infineon's development kit and software also enable easy design implementation.
The radiation-resistant NOR flash memories are packaged in a 24 mm x 12 mm,
36-pin ceramic flat-pack package. The devices operate over the -55°C to 125°C temperature range (SEU rate < 1 x 10-16 upsets/bit-day, SEL > 60 MeV.cm2/mg (85°C), SEFI > 60 MeV.cm2/mg (LET) and SEU threshold > 28 Mev.cm2/mg (LET)).