Interview with Dr. Giorgia Longobardi
Novel GaN transistors from Cambridge GaN Devices
23. Mai 2022, 09:19 Uhr |
Ralf Higgelke
At PCIM Europe, Cambridge GaN Devices (CGD) presented novel GaN transistors that can be driven as easily and robustly as silicon MOSFETs. Here we talked to Dr Giorgia Longobardi, CEO and co-founder of the company.
© elektroniknet
At PCIM Europe, Cambridge GaN Devices (CGD) presented novel GaN transistors that can be driven as easily and robustly as silicon MOSFETs. Here we talked to Dr Giorgia Longobardi, CEO and co-founder of the company.
