Interview with Dr. Giorgia Longobardi

Novel GaN transistors from Cambridge GaN Devices

23. Mai 2022, 9:19 Uhr | Ralf Higgelke
Giorgia Longobardi. Cambridge GaN Devices. PCIM Europe 2022
Dr Giorgia Longobardi (left) talking to elektroniknet editor Ralf Higgelke
© WEKA Fachmedien

At PCIM Europe, Cambridge GaN Devices (CGD) presented novel GaN transistors that can be driven as easily and robustly as silicon MOSFETs. Here we talked to Dr Giorgia Longobardi, CEO and co-founder of the company.

At PCIM Europe, Cambridge GaN Devices (CGD) presented novel GaN transistors that can be driven as easily and robustly as silicon MOSFETs. Here we talked to Dr Giorgia Longobardi, CEO and co-founder of the company.

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