Dr Giorgia Longobardi (left) talking to elektroniknet editor Ralf Higgelke
At PCIM Europe, Cambridge GaN Devices (CGD) presented novel GaN transistors that can be driven as easily and robustly as silicon MOSFETs. Here we talked to Dr Giorgia Longobardi, CEO and co-founder of the company.
At PCIM Europe, Cambridge GaN Devices (CGD) presented novel GaN transistors that can be driven as easily and robustly as silicon MOSFETs. Here we talked to Dr Giorgia Longobardi, CEO and co-founder of the company.