Interview with Dr. Giorgia Longobardi

Novel GaN transistors from Cambridge GaN Devices

23. Mai 2022, 9:19 Uhr | Ralf Higgelke
Dr Giorgia Longobardi (left) talking to elektroniknet editor Ralf Higgelke
© Componeers GmbH

At PCIM Europe, Cambridge GaN Devices (CGD) presented novel GaN transistors that can be driven as easily and robustly as silicon MOSFETs. Here we talked to Dr Giorgia Longobardi, CEO and co-founder of the company.

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At PCIM Europe, Cambridge GaN Devices (CGD) presented novel GaN transistors that can be driven as easily and robustly as silicon MOSFETs. Here we talked to Dr Giorgia Longobardi, CEO and co-founder of the company.

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