Rohm
SiC MOSFETs for BBUs in HVDC Architectures
Rohm announced that its 750 V SiC MOSFET has been adopted in a Battery Backup Unit (BBU) for AI server power supplies. As AI servers move to higher voltages and HVDC architectures, the device was selected to support next-generation power systems.
As GPUs continue to deliver higher performance and generative AI adoption expands, data center power consumption is increasing rapidly. To address this issue, the industry is moving toward HVDC architectures to reduce power transmission losses. In these high-power, high-voltage environments, BBUs and CUs (Capacitor Units), which compensate power at the server-rack level, are playing an increasingly important role in protecting systems and massive volumes of data in the event of abnormalities such as power outages or momentary interruptions.
The adopted product is the SCT4013DLL, a 750 V SiC MOSFET that is installed in the power supply section of a ±400 V power architecture for AI servers. Leveraging the characteristics of SiC, this product offers high-temperature tolerance with a maximum junction temperature (Tj) of 175°C, enabling stable operation even in BBUs where heat generation increases as voltages and power density rise.
In next-generation 800 VDC power architectures, the supply voltage delivered to the battery pack inside the BBU is approximately 560 V. For this reason, Rohm’s 750 V rated SiC MOSFETs can also be used in these systems.
HVDC power supplies for next-generation AI servers require backup systems capable of controlling high voltages and large currents instantly, with minimal power loss in the event of an abnormality. To meet these demanding requirements, SiC power devices that combine high voltage capability, low loss, and high-temperature tolerance are expected to serve as key devices at the core of power control.
