Wide Bandgap Semiconductors

How JC-70 Develops Standards for GaN and SiC

04. April 2019, 15:00 Uhr   |  Ralf Higgelke

How JC-70 Develops Standards for GaN and SiC
© WEKA Fachmedien

Our editor Ralf Higgelke met with Tim McDonald, Senior Consulting Advisor for the CoolGaN program at Infineon and co-chair of the JEDEC committee JC-70, which deals with the standardization of Wide-Bandgap power semiconductors.

Tim McDonald is not only Senior Consulting Advisor for CoolGaN at Infineon, but also co-chair of the JEDEC committee JC-70, which focuses on the standardization of wideband gap power semiconductors. We asked him about his work on this committee.

For more than ten years Tim McDonald has been dealing with nothing but gallium nitride – first at International Rectifier, and now at Infineon after its acquisition.

He is also co-chairing the JEDEC committee JC-70 Wide Bandgap Power Electronic Conversion Semiconductors. Together with Dr. Stephanie Watts Butler of Texas Instruments, he coordinates the work of the two subcommittees, one dedicated to silicon carbide (SiC), the other to gallium nitride (GaN).

DESIGN&ELEKTRONIK met Tim McDonald at the ECPE Wide Bandgap User Forum in late March 2019 and asked him how the committee’s work is progressing.

Interview with Tim McDonald, Infineon

Auf Facebook teilenAuf Twitter teilenAuf Linkedin teilenVia Mail teilen

Das könnte Sie auch interessieren

“Wolfspeed is no more our Ugly Duckling”
“Now we can attack silicon MOSFETs directly!”
Automotive is Driving SiC Adoption
X-FAB Doubles 6-Inch SiC Foundry Capacity
CoolGaN Enters the Mass Market
ECPE Launches Two International Wide-Bandgap-Projects
Understanding SiC Better
Is Scandium Aluminum Nitride better as GaN?
Majority Stake in SiC Wafer Manufacturer Acquired
»We See Ourselves Very Well Positioned«
Assembly and Interconnection will be the Issue of the Future
Interview of CEOs of Power Integrations, Navitas and GaN Systems

Verwandte Artikel

Infineon Technologies AG, INFINEON Technologies AG Neubiberg