International

Fraunhofer IAF / Power Semiconductors

Aluminum Scandium Nitride for the First Time Processed by MOCVD

HEMT devices based on AlScN are considered the next generation of power electronics. Now, researchers at Fraunhofer IAF have achieved the previously impossible: growing this material by metalorganic chemical vapor deposition (MOCVD).

Poll

Consumers Open to E-Mobility

Consumers in Germany are open to new forms of mobility. This is shown by a recent survey…

Hybrid Material Robot Systems

Cost-Effective Robots Build Complex Structures

"Relative robots" build aircraft from simple basic elements that blur the boundaries…

Prototype in the North Sea

Wave Power Plant Starts Generating Electricity

Generating electricity with the power of ocean waves - this has recently been done at a…

Small amounts up to 25 € can be settled

Contactless Payment System for Vending Machines

More and more people want to pay contactless - even small amounts of money. The number of…

Female Founders Wanted

AmCham Germany Awards Female Founders

You're a female founder of a start-up which is already successful on the market? Then send…

Globalfoundries Technology Conference

CEO Draws the Line at 12 nm

The largest semiconductor manufacturer based in Europe has realigned itself. The original…

Think Tank for Digital Mobility

New Shareholders for R&D Centre in Graz

Infineon and Voestalpine participate in Virtual Vehicle Research GmbH, the R&D Center for…

ON Semiconductor & AImotive

Combining Image and Radar Sensors

ON Semiconductor and the Hungarian start-up AImotive are jointly developing a hardware…

Finepower / Electric Vehicles

3 kW On-Boad Charger with GaN Transistors

Conventional on-board chargers for electric automobiles are reaching their performance and…