SiCrystal and STMicroelectronics

New Multi-Year Silicon Carbide Wafer Supply Agreement

15. Januar 2020, 14:00 Uhr   |  Ralf Higgelke

New Multi-Year Silicon Carbide Wafer Supply Agreement
© Rohm

How high the anticipated demand for SiC MOSFETs especially for electromobility is becomes clear, if you look at STMicroelectronics. The company has now announced a multi-year supply agreement for SiC wafers with the Rohm subsidiary SiCrystal. This is the latest step from a series of agreements.

Just a few weeks after doubling its supply agreement with Cree and completely acquiring the SiC wafer manufacturer Norstel, STMicroelectronics has announced a multi-year supply agreement worth over 120 million US dollars for 150 mm SiC wafers with SiCrystal, a Rohm Group company. This agreement is intended to increase the flexibility of industrial applications and support the commercial expansion of SiC products in the automotive and industrial sectors. The semiconductor manufacturer is experiencing an increasing demand for silicon carbide power semiconductors.

“This additional long-term SiC substrate supply agreement comes on top of the external capacity we have already secured and the internal capacity we are ramping. It will enable ST to increase the volume and balance of the wafers we will need to meet the strong demand ramp-up from customers for automotive and industrial programs over the next years”, said Jean-Marc Chery, President and CEO of STMicroelectronics.

“At we SiCrystal are very pleased to enter into this supply agreement with our longstanding customer ST. We will continue to support our partner to expand silicon carbide business by ramping up wafer quantities continuously and by providing reliable quality at all times”, said Dr. Robert Eckstein, President and CEO of SiCrystal.

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STMicroelectronics GmbH, SiCrystal AG, ROHM Semiconductor GmbH