SiC power electronics packages
Infineon and Rohm collaborate
Infineon and Rohm have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers.
SiC components are used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. The partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both Infineon and Rohm. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.
As part of the agreement, Rohm will adopt Infineon's innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon's top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.
At the same time, Infineon will take on Rohm’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon's recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM's advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.
Infineon and Rohm plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN).
