MOSFET Driver from Infineon
EiceDRIVER Solve Ground Shift Issues in Power Supplies
Every time a power MOSFET is switched on or off in a switched-mode power supply, parasitic inductances cause ground shifts. Two new gate driver ICs from Infineon prevent this even at dynamic ground shifts of up to ±150 V.
Ground shifts can lead to uncontrolled switching of gate driver ICs with switched-mode power supply (SMPS). In extreme cases, this results in electrical overloading of power MOSFETs and malfunctioning of the SMPS. To effectively prevent false triggering of power MOSFETs, the 1-channel low-side gate driver ICs 1EDN7550 and 1EDN8550 of Infineon’s EiceDRIVER family have truly differential control inputs. They are available to order now.
The EiceDRIVER 1EDN7550 and 1EDN8550 are immune to static ground offsets up to ±70 V. Safe operation is guaranteed at dynamic ground offsets of up to ±150 V. All this is possible without having to cut ground loops. Since the gate driver ICs have truly differential inputs, only the voltage difference between the two inputs is decisive for the switching behaviour of the gate driver IC. The devices are well suited for controlling power MOSFETs with Kelvin source contact. They are available in a 6-pin SOT-23 package which, according to Infineon, saves space and is less expensive than traditional solutions with electrically isolated gate driver ICs.
In addition, the 1EDNx550 family is a cost-effective solution for applications where the distance between a control IC and the gate driver IC is greater than usual. This may be due to product design requirements, printed circuit board technology of choice or daughter card concepts. These constellations have in common that parasitic ground inductances are the cause of ground shifts between the control IC and the gate driver IC.
Hubert Baierl of Infineon will give a presentation on this IC family at our Power Semiconductor Users Forum on November 7 and 8, 2018. Take advantage of the attractive early bird offers until September 27, 2018.
