Keithley Instruments, Inc. Performing Charge Pumping Measurements with the Model 4200-SCS Semiconductor Characterization System

Charge pumping (CP) is a well-known measurement technique for analyzing the semiconductor–dielectric interface of MOS structures. Important information about the quality and degradation of a device can be extracted from charge pumping current (ICP) measurement results, including the interface trap density and the mean capture cross section. Pulsing a gate voltage and measuring a DC substrate current simultaneously is the basis for the various charge pumping methods, so a pulse generator and sensitive DC ammeter are required to make these measurements. The Model 4200-SCS Semiconductor Characterization System offers a complete solution for charge pumping measurements because it contains the necessary hardware to make the sensitive measurements, as well as software to automate the measurements and analyze the results.