Adesto Technologies New Non-Volatile Memory Consumes 70 % Less Electricity

Adesto hat die Architektur der neuen Speicher so ausgelegt, dass sich kleine Datenmengen schreiben lassen, ohne dass eine ganze  Seite neu programmiert werden muss. Dadurch reduziert sich die Stromaufnahme gegenüber Standard-Flash-Speichern um bis zu 70 Prozent.

Adesto's new »FusionHD« non-volatile memory with capacities up to 32 MBit consumes 70 percent less power than standard flash memory and is therefore suitable for use in Edge-IoT devices.

The FusionHD memory has been designed by Adesto to meet the code storage and data logging requirements of various wearables, hearables, sensor edge devices and industrial systems.

They feature low power consumption, fast data transfer and robust, reliable operation. Unlike standard flash memory, FusionHDs feature a small page erase and write architecture that makes storing small data packets fast and efficient. In addition, large data packets can be stored and retrieved with minimal CPU clock cycles, reducing processing time and battery consumption.

"When we first introduced the Fusion family of non-volatile memory, we optimized it to extend battery life in new products such as Bluetooth LE-enabled consumer IoT devices," said Paul Hill, senior marketing director, Adesto. "The new version has been enhanced with powerful features."

The FusionHD memory offers a range of intelligent monitoring features, including battery condition monitoring and a system reset generator, reducing the bill of materials, total cost of ownership and footprint of the system.

In addition, FusionHD offers a number of new features specifically designed for low-power IoT edge systems. These include the flexible memory architecture: a new SRAM read/write buffer reduces the number of writes required to the flash array, significantly improving endurance. At the same time, CPU clock cycles and power consumption are reduced.

The architecture is designed to write small amounts of data without reprogramming a whole page. This reduces power consumption by up to 70 percent compared to standard flash memory.

Active IRQ allows the memory to output an interrupt to the MCU upon completion of an internal program or delete, optimizing overall power consumption and reducing CPU overhead. The read, modify, and write operation enables easier development of software drivers and reduces CPU load. The memory is designed for 104 MHz SPI operation and provides QSPI with XiP function, enabling direct code execution from the host MCU.

Security features include unique system identification and a User One-Time Programmable (OTP) security register that can be used to store system-level keys. The memories operate over a wide voltage range from 1.7V to 3.6V. Samples are available now.