According to analysts at TrendForce/DRAMeXchange, Tsinghua Unigroup's DRAM unit will have no difficulty pulling up a fab for DRAM production because Yangtze Memory Group, also a subsidiary of Tsinghua Unigroup, has experience building new fabs. The design of the DRAMs could be taken over by Unigroup Guoxin Microelectronics, which also belongs to the Tsinghua Unigroup and for which the subject is not new. However, the new company would lack experience in the field of DRAM process technology.
Tsinghua Unigroup had already announced five years ago that it wanted to enter the DRAM business, but then abandoned its plans to concentrate on manufacturing NAND flash ICs.
This task has been taken over by the Yangtze Memory Group (YMTC), which is establishing the Chinese production of NAND flash ICs. According to TrendForce, Foxconn Semiconductor also wanted to invest in the construction of a 12-inch fab for memory ICs in China. At the moment, however, the analysts do not know how far the plans have progressed.
Actually, the Fujian Jin Hua Integrated Circuit Company (JHICC) should have started manufacturing DRAMs at the end of 2018. To this end, 5.3 billion dollars were invested in the construction of a DRAM factory. JHICC had developed the DRAM process technology with the help of the Taiwanese Foundry UMC. Micron then sued JHICC for stealing DRAM designs from the company, and the Washington Department of Commerce put the company on the Entity List, which means that US companies are not allowed to supply JHICC without special licenses. As a result, the company does not appear to have started manufacturing DRAMs as planned.
Innotron is therefore the only Chinese DRAM company left that wants to start production of 8 Gb types at the end of the year. In order to become as independent as possible from imports as the Chinese government plans, this is probably not enough for China.