Schwerpunkte

Ferdinand Braun Institute

Gallium-Oxide Power MOSFET Handles 155 MW/cm²

30. August 2019, 08:33 Uhr   |  Ralf Higgelke

Gallium-Oxide Power MOSFET Handles 155 MW/cm²
© FBH/schurian.com

Gallium oxide chip with transistor and measurement structures, manufactured at FBH by projection imaging.

The Ferdinand Braun Institute has developed a lateral power transistor that achieves a power density of 155 MW/cm² at a breakdown voltage of 1.8 kV. The breakdown field strength reaches 1.8 MV/cm to 2.2 MV/cm.

Main goal of power semiconductors is to increase the power density, in other words to generate less and less electrical losses in the smallest possible area. Conventional silicon components are encountering their limits here. Scientists all over the world are therefore investigating new materials and components that can meet these requirements. The Ferdinand Braun Institute (FBH) has now achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3).

The newly-developed lateral MOSFETs provide a breakdown voltage of 1.8 kV and a record power figure of merit of 155 MW per square centimeter, close to the theoretical material limit of gallium oxide. At the same time, the breakdown field strengths reach 1.8 MV/cm to 2.2 MV/cm for gate-drain spacings between 2 µm and 10 µm. This is significantly higher than those of established wide bandgap semiconductors such as silicon carbide or gallium nitride.

Optimized Layer Structure and Gate Topology

In order to achieve these improvements, the FBH team tackled the layer structure and gate topology. The basis was provided by substrates from the Leibniz Institute for Crystal Growth with an optimized epitaxial layer structure. As a result, the defect density could be reduced and electrical properties improved. This leads to lower on-state resistances.

The gate topology has been further optimized, allowing to reduce high field strengths at the gate edge. This in turn leads to higher breakdown voltages.

Original Publication

K. Tetzner, et al., Lateral 1.8 kV β -Ga2O3­ MOSFET With 155 MW/cm² Power Figure of Merit, IEEE Electron Device Letters, vol. 40, no. 9, pp. 1503-1506, Sept. 2019. DOI: 10.1109/LED.2019.2930189

Auf Facebook teilenAuf Twitter teilenAuf Linkedin teilenVia Mail teilen

Das könnte Sie auch interessieren

Production of gallium arsenide power semiconductors started
With X-Rays to a Better Understanding of GaN HEMTs
“Now we can attack silicon MOSFETs directly!”
Direct Study of Conduction Electrons with Dilute Semiconductors
CoolGaN Enters the Mass Market
Strong global demand for power semiconductors
Is Scandium Aluminum Nitride better as GaN?
Interview of CEOs of Power Integrations, Navitas and GaN Systems
How JC-70 Develops Standards for GaN and SiC
GaN Power ICs with Integrated Sensors
One Billion Dollars For SiC Capacity

Verwandte Artikel

elektroniknet